Controlling n-Type Doping in MoO3
نویسندگان
چکیده
منابع مشابه
Te implantation in Ge(001) for n-type doping applications
5 10 Teþ ions cm 2 were implanted in an Ge(001) substrate using an industrial implanter with a Teþ beam energy of 180 keV. In addition to usual implantation-mediated defects observed in Ge with usual dopants, Te implantations lead to the formation of amorphous surface GeO clusters exhibiting micrometer scale sizes, as well as deep extended defects. Implantation defects promote the formation of ...
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ژورنال
عنوان ژورنال: Chemistry of Materials
سال: 2017
ISSN: 0897-4756,1520-5002
DOI: 10.1021/acs.chemmater.6b04479